Open AccessECV profiling of GaAs and GaN HEMT heterostructures
Author(s) -
G. E. Yakovlev,
В. И. Зубков
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/993/1/012038
Subject(s) - high electron mobility transistor , heterojunction , optoelectronics , materials science , doping , common emitter , capacitance , voltage , transistor , electrical engineering , chemistry , electrode , engineering