
Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties
Author(s) -
А. М. Блохин,
Ekaterina Kruglova,
Б. В. Семисалов
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/993/1/012035
Subject(s) - dielectric , charge (physics) , transistor , mosfet , nonlinear system , materials science , semiconductor , reliability (semiconductor) , nanoscopic scale , field effect transistor , electronic engineering , optoelectronics , physics , voltage , electrical engineering , nanotechnology , engineering , thermodynamics , quantum mechanics , power (physics)