Open AccessThe effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates
Author(s) -
K. Yu. Shubina,
E. V. Pirogov,
A. M. Mizerov,
E. V. Nikitina,
A. D. Bouravleuv
Publication year - 2018
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/993/1/012008
Subject(s) - materials science , buffer (optical fiber) , molecular beam epitaxy , morphology (biology) , epitaxy , layer (electronics) , optoelectronics , nitride , aluminium , nanotechnology , composite material , telecommunications , biology , computer science , genetics
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