Open AccessThe influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge
Author(s) -
В. С. Климин,
R. V. Tominov,
A. V. Es’kov,
S. Yu. Krasnoborodko,
O A Ageev
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/9/092005
Subject(s) - etching (microfabrication) , gallium arsenide , plasma , plasma etching , materials science , reactive ion etching , chloride , isotropic etching , gallium , optoelectronics , composite material , metallurgy , layer (electronics) , physics , quantum mechanics