Open AccessDegradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures
Author(s) -
Mstislav Makeev,
С. А. Мешков,
Vladimir Sinyakin
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/9/092004
Subject(s) - ohmic contact , quantum tunnelling , diode , materials science , degradation (telecommunications) , resonant tunneling diode , optoelectronics , thermal resistance , thermal , contact resistance , dependency (uml) , electrical engineering , layer (electronics) , composite material , optics , thermodynamics , quantum well , physics , engineering , laser , systems engineering