Open AccessModeling the semiconductor devices with negative differential resistance based on nitride nanowires
Author(s) -
А. М. Можаров,
Filipp Komissarenko,
A D Bolshakov,
Vladimir V. Fedorov,
G. A. Sapunov,
G. É. Cirlin,
I. S. Mukhin
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/8/082017
Subject(s) - nanowire , materials science , optoelectronics , diode , nitride , doping , semiconductor , terahertz radiation , gunn diode , nanotechnology , layer (electronics)