Open AccessSuppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements
Author(s) -
V. S. Volcheck,
V. R. Stempitsky
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/8/082015
Subject(s) - high electron mobility transistor , materials science , optoelectronics , gallium nitride , graphene , transistor , layer (electronics) , thermal , wide bandgap semiconductor , nanotechnology , electrical engineering , physics , voltage , meteorology , engineering