Open AccessInfluence of dry etching condition to geometry of vertically aligned silicon nanostructures
Author(s) -
И. А. Морозов,
A. S. Gudovskikh,
D. A. Kudryashov,
K. P. Kotlyar
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/5/052030
Subject(s) - silicon , materials science , etching (microfabrication) , nanostructure , dry etching , optoelectronics , absorption (acoustics) , solar cell , attenuation coefficient , layer (electronics) , engineering physics , nanotechnology , optics , composite material , engineering , physics