Open AccessCapacitance characterization of GaP/n-Si structures grown by PE-ALD
Author(s) -
Artem Baranov,
A. S. Gudovskikh,
Arouna Darga,
Sylvain Le Gall,
JeanPaul Kleider
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/5/052027
Subject(s) - band gap , atomic layer deposition , materials science , deep level transient spectroscopy , wafer , capacitance , analytical chemistry (journal) , silicon , optoelectronics , schottky barrier , depletion region , schottky diode , layer (electronics) , nanotechnology , chemistry , semiconductor , electrode , chromatography , diode
International audienceThin layers of μc-GaP and a-GaP grown on n- type silicon wafers by plasmaenhanced atomic layer deposition at 380 C are characterized by space charge capacitance techniques, C-V profiling and deep level transient spectroscopy (DLTS). Two defect levels with activation energies of 0.30 eV and 0.80 eV were detected by DLTS in the μc-GaP/n-Si structure. Measurements performed on Schottky barriers formed on n-Si after selective etching of the GaPlayer did not reveal any defect level meaning that the observed defects in the μc-GaP/n-Si structure are related to μc-GaP layer