
The impact of 3D compositional fluctuations on the external quantum efficiency and defect generation in nitride alloys with a low In or Al molar fraction
Author(s) -
Е. И. Шабунина,
N. M. Shmidt,
A. E. Chernyakov,
N. A. Talnishnikh,
A. Y. Polyakov,
N. B. Smirnov,
I. H. Lee
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/5/052018
Subject(s) - electroluminescence , light emitting diode , materials science , nitride , alloy , full width at half maximum , mole fraction , quantum efficiency , volume fraction , optoelectronics , spectral line , noise (video) , degradation (telecommunications) , current density , quantum , current (fluid) , condensed matter physics , composite material , electronic engineering , thermodynamics , physics , image (mathematics) , layer (electronics) , quantum mechanics , artificial intelligence , computer science , engineering , astronomy