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Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 40 substrates
Author(s) -
А. А. Лазаренко,
M. S. Sobolev,
E. V. Pirogov,
N. V. Kryzhanovskaya,
E. V. Nikitina
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/3/032044
Subject(s) - epitaxy , heterojunction , molecular beam epitaxy , materials science , optoelectronics , silicon , layer (electronics) , nanotechnology

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