Open AccessModeling of semiconductor nanowire selective-area MOCVD growth
Author(s) -
A. A. Koriakin,
Manuel Reiter,
Zh. V. Sokolova,
N. V. Sibirev
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/3/032036
Subject(s) - nanowire , metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , nanostructure , planar , substrate (aquarium) , nanotechnology , deposition (geology) , semiconductor nanostructures , computation , vapor–liquid–solid method , optoelectronics , chemical physics , epitaxy , chemistry , layer (electronics) , paleontology , oceanography , computer graphics (images) , algorithm , sediment , geology , computer science , biology