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Site-controlled GaN nanocolumns with InGaN insertions grown by MBE
Author(s) -
Д. В. Нечаев,
А. Н. Семенов,
O. A. Koshelev,
V. N. Jmerik,
V. Yu. Davydov,
А. Н. Смирнов,
Galia Pozina,
T. V. Shubina,
S. V. Ivanov
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/3/032032
Subject(s) - molecular beam epitaxy , materials science , sapphire , optoelectronics , nucleation , layer (electronics) , epitaxy , nanotechnology , optics , laser , chemistry , physics , organic chemistry

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