Open AccessMBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate
Author(s) -
R. R. Reznik,
K. P. Kotlyar,
І. П. Сошніков,
С. А. Кукушкин,
А. В. Осипов,
E. V. Nikitina,
G. É. Cirlin
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/3/032014
Subject(s) - materials science , molecular beam epitaxy , silicon carbide , substrate (aquarium) , optoelectronics , silicon , layer (electronics) , epitaxy , nanoscopic scale , nanotechnology , composite material , oceanography , geology