Open AccessPreparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy
Author(s) -
А. А. Лазаренко,
T. N. Berezovskaya,
D. V. Denisov,
M. S. Sobolev,
E. V. Pirogov,
E. V. Nikitina
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/917/3/032003
Subject(s) - molecular beam epitaxy , materials science , heterojunction , silicon , optoelectronics , nitride , oxide , epitaxy , silicon nitride , nanotechnology , metallurgy , layer (electronics)