Open AccessTheoretical analysis of AlGaN/GaN resonant tunnelling diodes with step heterojunctions spacer and sub-quantum well
Author(s) -
Y Liu,
Bo Gao,
Ming Gong
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/864/1/012022
Subject(s) - quantum tunnelling , heterojunction , optoelectronics , resonant tunneling diode , diode , materials science , common emitter , quantum well , resistive touchscreen , current density , quantum , gallium nitride , physics , nanotechnology , electrical engineering , optics , quantum mechanics , layer (electronics) , engineering , laser