Open AccessGrowth of InAs NWs with controlled morphology by CVD
Author(s) -
Yonghui Huang,
M. Li,
J. Wang,
Yingjie Xing,
Hongqi Xu
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/864/1/012013
Subject(s) - chemical vapor deposition , materials science , superlattice , substrate (aquarium) , morphology (biology) , nanowire , nanotechnology , vapor phase , optoelectronics , deposition (geology) , crystal growth , crystal (programming language) , phase (matter) , crystallography , chemistry , computer science , paleontology , oceanography , physics , organic chemistry , sediment , biology , programming language , genetics , geology , thermodynamics
We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications