Open AccessDBD tranformerless power supplies: impact of the parasitic capacitances on the power transfer.
Author(s) -
Mame Andallah Diop,
Antoine Belinger,
Hubert Piquet
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/825/1/012004
Subject(s) - waveform , electrical engineering , capacitance , voltage , power (physics) , switched mode power supply , parasitic capacitance , inductance , parasitic element , transfer (computing) , maximum power transfer theorem , engineering , electronic engineering , computer science , physics , electrode , quantum mechanics , parallel computing
International audienceA new transformerless power supply for DBD application is presented here. The power supply is built with 10kV SiC MOSFET. This high voltage switches allow holding the high voltage required by the DBD. An analytical study of the converter's operation is presented to deduce the power transmitted to the DBD. A comparison between the experimental and theoretical electrical waveforms is shown. The experimental waveforms are particularly affected by all the parasitic capacitances. When all the switches are in OFF state, oscillations cause over-voltages across the switches. An analysis of the effect of each capacitance is presented and demonstrates that the parasitic capacitances of the switches and of the inductance play a key role in the actual power transfer