Open AccessInvestigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures
Author(s) -
E. V. Sleptsov,
А. В. Черных,
С. В. Черных,
А. А. Дорофеев,
Н. Б. Гладышева,
Mikhail N. Kondakov,
A. A. Sleptsova,
A. V. Panichkin,
М. П. Коновалов,
S. Didenko
Publication year - 2017
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/816/1/012039
Subject(s) - annealing (glass) , materials science , schottky barrier , heterojunction , schottky diode , optoelectronics , condensed matter physics , metallurgy , diode , physics
Empowering knowledge with every search
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom