
Sn influence on MBE growth of GeSiSn/Si MQW
Author(s) -
Artur Tuktamyshev,
В. А. Тимофеев,
А. И. Никифоров,
V. I. Mashanov,
А. К. Гутаковский,
N. A. Baydakova
Publication year - 2017
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/816/1/012020
Subject(s) - molecular beam epitaxy , materials science , photoluminescence , transmission electron microscopy , lattice constant , epitaxy , lattice (music) , condensed matter physics , optoelectronics , crystallography , diffraction , optics , nanotechnology , chemistry , physics , layer (electronics) , acoustics