Open AccessResistive switching in the Au/Zr/ZrO2-Y2O3/TiN/Ti memristive devices deposited by magnetron sputtering
Author(s) -
О. Н. Горшков,
A. N. Mikhaylov,
А. П. Касаткин,
С. В. Тихов,
Д. О. Филатов,
Д. А. Павлов,
A. I. Belov,
M. N. Koryazhkina,
А. И. Бобров,
Н. В. Малехонова,
E.G. Gryaznov,
И. Н. Антонов,
М. Е. Шенина
Publication year - 2016
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/741/1/012174
Subject(s) - tin , materials science , sputter deposition , optoelectronics , cavity magnetron , sputtering , resistive touchscreen , resistive random access memory , atmospheric temperature range , thin film , nanotechnology , electrical engineering , metallurgy , voltage , physics , engineering , meteorology