Open AccessImpact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN/GaN HEMTs
Author(s) -
S. I. Vidyakin,
А. Г. Гудков,
G. A. Oganesyan,
V. N. Petrov,
А. В. Сахаров,
Е. И. Шабунина,
A. A. Zybin,
Ya. M. Parnes
Publication year - 2016
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/741/1/012172
Subject(s) - high electron mobility transistor , reliability (semiconductor) , materials science , optoelectronics , nanomaterials , nanotechnology , transistor , electrical engineering , physics , power (physics) , engineering , voltage , quantum mechanics