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Optimization of structural and growth parameters of metamorphic InGaAs/GaAs photoconverters grown by MOCVD
Author(s) -
D. V. Rybalchenko,
S. A. Mintairov,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2016
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/741/1/012086
Subject(s) - heterojunction , materials science , metalorganic vapour phase epitaxy , optoelectronics , epitaxy , band gap , laser , metamorphic rock , optics , layer (electronics) , nanotechnology , physics , geochemistry , geology

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