Open AccessChemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation.
Author(s) -
Francesco d’Acapito,
E. Souchier,
Pierre Noé,
P. Blaise,
M. Bernard,
V. Jousseaume
Publication year - 2016
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/712/1/012046
Subject(s) - spectroscopy , chemical state , absorption spectroscopy , absorption (acoustics) , bridge (graph theory) , x ray absorption spectroscopy , materials science , electrode , x ray photoelectron spectroscopy , software deployment , state (computer science) , flash memory , random access , metal , analytical chemistry (journal) , optoelectronics , chemical engineering , chemistry , computer science , optics , composite material , physics , metallurgy , engineering , computer network , computer hardware , algorithm , operating system , chromatography , quantum mechanics , medicine
International audienceConducting Bridge Random Access Memories (CBRAM) are a promising substitute for FLASH technology but problems with limited retention of the low resistance ON state still hamper their massive deployment. Depth resolved X-ray Absorption Spectroscopy has been used to describe the chemical state of the atoms of the active electrode (in this case Ag) and to reveal the role of Sb as stabilizer of the metallic stat