
GaAs- A3B5heterostructures for high-speed power diodes manufacturing
Author(s) -
F. Yu. Soldatenkov,
В. А. Козлов,
I. L. Shul’pina,
V I Ivanovskiy
Publication year - 2015
Publication title -
journal of physics. conference series
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/661/1/012066
Subject(s) - diode , materials science , optoelectronics , heterojunction , carrier lifetime , nanosecond , gallium arsenide , substrate (aquarium) , layer (electronics) , nanotechnology , optics , laser , silicon , physics , oceanography , geology