Open AccessTerahertz excitations in HgTe-based field effect transistors
Author(s) -
А. М. Кадыков,
Christophe Conséjo,
Ф. Теппе,
Wilfried Desrat,
Leonardo Viti,
Miriam S. Vitiello,
Dominique Coquillat,
Sandra Ruffenach,
S. V. Morozov,
S Kristopenko,
Michał Marcinkiewicz,
N. Dyakonova,
W. Knap,
В. И. Гавриленко,
N. N. Michailov,
С. А. Дворецкий
Publication year - 2015
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/647/1/012009
Subject(s) - terahertz radiation , photoconductivity , landau quantization , cyclotron resonance , condensed matter physics , magnetic field , physics , field (mathematics) , transistor , optoelectronics , field effect transistor , cyclotron , terahertz spectroscopy and technology , voltage , quantum mechanics , mathematics , pure mathematics
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for which zero mode Landau Levels are crossing. Therefore, this specific feature of TeraHertz photoconductivity spectra can tentatively attributed to this magnetic field driven topological phase transition