Electronic excitation to low-lying states of GeF4molecule by electron impact: A comparative study with CF4and SiF4molecules | Zendy

S. Ohtomi | Zendy; M Matsui | Zendy; Yoko Mochizuki | Zendy; A. Suga | Zendy; H. Kato | Zendy; M. Hoshino | Zendy; Denis Duflot | Zendy; P. Limão-Vieira | Zendy; H. Tanaka | Zendy

Open Access

Electronic excitation to low-lying states of GeF₄molecule by electron impact: A comparative study with CF₄and SiF₄molecules

Author(s) -

S. Ohtomi,

M Matsui,

Yoko Mochizuki,

A. Suga,

H. Kato,

M. Hoshino,

Denis Duflot,

P. Limão-Vieira,

H. Tanaka

Publication year - 2015

Publication title -

journal of physics conference series

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 85

eISSN - 1742-6596

pISSN - 1742-6588

DOI - 10.1088/1742-6596/635/7/072041

Subject(s) - excitation , atomic physics , electron ionization , molecule , range (aeronautics) , electron , electron scattering , electronic structure , scattering , chemistry , materials science , physics , ion , ionization , computational chemistry , optics , nuclear physics , organic chemistry , quantum mechanics , composite material

International audienceWe report on the measurements of the electron impact electronic excitation cross sections for XF₄ (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF₄ molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range

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