Open AccessMicroscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films
Author(s) -
Hisato Yabuta,
Nobuyuki Kaji,
Mikio Shimada,
Toshiaki Aiba,
Kazuyuki Takada,
Hideyuki Omura,
Taihei Mukaide,
Ichiro Hirosawa,
Tomoyuki Koganezawa,
Hideya Kumomi
Publication year - 2014
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/518/1/012001
Subject(s) - materials science , amorphous solid , annealing (glass) , sputtering , indium , hall effect , sputter deposition , grain boundary , transparent conducting film , electron mobility , electrical resistivity and conductivity , thin film , semiconductor , analytical chemistry (journal) , optoelectronics , microstructure , crystallography , composite material , nanotechnology , chemistry , engineering , chromatography , electrical engineering