Open AccessA Circuital Model of Switching Behaviour of 4H-SiC p+-n-n+ Diodes Valid at any Current and Temperature
Author(s) -
Salvatore Bellone,
Francesco G. Della Corte,
Luigi Di Benedetto,
Gian Domenico Licciardo
Publication year - 2014
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/494/1/012004
Subject(s) - current (fluid) , diode , materials science , optoelectronics , condensed matter physics , engineering physics , physics , thermodynamics
A circuital model of 4H-SiC p + -n-n + diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparison with numerical simulations and experimental measurements