Open AccessDefect analysis of a silicon nanowire transistor by X-ray energy dispersive spectroscopy technique in a STEM: 2D mappings and tomography
Author(s) -
Kévin Lepinay,
F. Lorut,
Alexandre Pofelski,
R. Coquand,
R. Pantel,
Thierry Épicier
Publication year - 2013
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/471/1/012027
Subject(s) - silicon , materials science , transistor , spectroscopy , tomography , nanowire , silicon nanowires , x ray , analytical chemistry (journal) , optoelectronics , optics , physics , chemistry , quantum mechanics , voltage , chromatography