Open AccessA TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology
Author(s) -
DJ Norris,
I. M. Ross,
A. Dobbie,
Maksym Myronov,
T E Whall,
E. H. C. Parker,
D. R. Leadley,
T. Walther
Publication year - 2011
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/326/1/012023
Subject(s) - wafer , materials science , transmission electron microscopy , dark field microscopy , scanning transmission electron microscopy , crystal twinning , pmos logic , dislocation , scanning electron microscope , epitaxy , high resolution transmission electron microscopy , crystallography , optoelectronics , nanotechnology , microscopy , composite material , optics , chemistry , transistor , microstructure , voltage , physics , quantum mechanics , layer (electronics)