Open AccessEffects of the annealing temperature on the structural and electronic properties of MBE grown InGaN/GaN quantum wells
Author(s) -
F. Ivaldi,
Nils Asmus Kristian Kaufmann,
S. Kret,
Amélie Dussaigne,
B. Kurowska,
Marcin T. Klepka,
Jerzy Dabrowski,
Piotr Dłużewski,
N. Grandjean
Publication year - 2011
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/326/1/012012
Subject(s) - annealing (glass) , materials science , quantum well , condensed matter physics , molecular beam epitaxy , optoelectronics , metallurgy , composite material , epitaxy , optics , physics , layer (electronics) , laser