Open AccessElectrical levels of dislocation networks in p- and n-type Si
Author(s) -
Ivan Isakov,
А. С. Бондаренко,
О. Ф. Вывенко,
V. I. Vdovin,
Е. В. Убыйвовк,
Oleg Kochuk
Publication year - 2011
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/281/1/012010
Subject(s) - misorientation , deep level transient spectroscopy , twist , tilt (camera) , materials science , dislocation , silicon , wafer , condensed matter physics , spectroscopy , crystallography , molecular physics , optoelectronics , chemistry , geometry , physics , composite material , microstructure , mathematics , quantum mechanics , grain boundary
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