Open AccessIdentification of dislocation-related luminescence participating levels in silicon by DLTS and Pulsed-CL profiling
Author(s) -
A. S. Bondarenko,
O. F. Vyvenko,
Ivan Isakov
Publication year - 2011
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/281/1/012008
Subject(s) - dislocation , materials science , silicon , schottky diode , diode , luminescence , optoelectronics , spectral line , analytical chemistry (journal) , chemistry , physics , chromatography , composite material , astronomy