Open AccessInfluence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate
Author(s) -
Meng Wei,
Xiaoliang Wang,
Xu Pan,
Hongling Xiao,
Cuimei Wang,
Minglan Zhang,
Zhanguo Wang
Publication year - 2011
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/276/1/012094
Subject(s) - materials science , buffer (optical fiber) , chemical vapor deposition , layer (electronics) , transmission electron microscopy , optoelectronics , metalorganic vapour phase epitaxy , substrate (aquarium) , diffraction , optical microscope , scanning electron microscope , crystallography , epitaxy , composite material , nanotechnology , optics , chemistry , telecommunications , oceanography , physics , geology , computer science
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