
An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon
Author(s) -
Philip D. Edmondson,
R. C. Birtcher,
Vladimir Vishnyakov,
Pedro López,
Lourdes Pelaz,
Luis A. Marqués,
S. E. Donnelly
Publication year - 2006
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/26/1/068
Subject(s) - recrystallization (geology) , amorphous solid , materials science , kinetic monte carlo , silicon , transmission electron microscopy , annealing (glass) , monte carlo method , amorphous silicon , molecular physics , fluence , vacancy defect , radius , ion , condensed matter physics , crystallographic defect , kinetic energy , crystalline silicon , crystallography , nanotechnology , chemistry , physics , optoelectronics , organic chemistry , mathematics , computer security , computer science , composite material , biology , paleontology , quantum mechanics , statistics