Open AccessElectrical characterization of MOS structures with self-organized three-layer gate dielectric containing Si nanocrystals
Author(s) -
N. Nedev,
D. Nesheva,
Mario Curiel,
E. Manolov,
I. Petrov,
Benjamín Valdez,
I. Bineva
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/253/1/012034
Subject(s) - materials science , characterization (materials science) , gate dielectric , nanocrystal , dielectric , layer (electronics) , optoelectronics , nanotechnology , high κ dielectric , transistor , electrical engineering , voltage , engineering