Open AccessThe effects of polarization fields on exciton binding energy in GaN quantum dots
Author(s) -
Asghar Asgari,
Shiva Asadzadeh
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/248/1/012020
Subject(s) - quantum dot , exciton , biexciton , polarization (electrochemistry) , binding energy , condensed matter physics , physics , optoelectronics , electro absorption modulator , materials science , chemistry , quantum mechanics , quantum dot laser , semiconductor , semiconductor laser theory