Open AccessMonte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium
Author(s) -
Craig Riddet,
J.R. Watling,
KahHou Chan,
A. Asenov
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/242/1/012017
Subject(s) - germanium , monte carlo method , materials science , cmos , substrate (aquarium) , orientation (vector space) , electron mobility , mosfet , optoelectronics , channel (broadcasting) , silicon germanium , scaling , electronic engineering , engineering physics , computer science , silicon , transistor , electrical engineering , physics , engineering , telecommunications , geometry , statistics , oceanography , mathematics , geology , voltage