Open AccessElectrical Transport Properties of Few-Layer SnS2 Field-effect Transistors
Author(s) -
Lu Zhang,
Tuo Li,
Yan Peng,
Xin Zou,
Chao Ji,
Yongzheng Zhan,
Jiaqi He,
Qing Zhang
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2356/1/012017
Subject(s) - materials science , graphene , exfoliation joint , optoelectronics , band gap , layer (electronics) , field effect transistor , electron mobility , transistor , nanotechnology , engineering physics , electrical engineering , voltage , engineering