Open AccessSimulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer
Author(s) -
Songming Xiong,
Wenxian Huang,
Ali M. Hassan,
Rong Zhong
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2355/1/012073
Subject(s) - high electron mobility transistor , mole fraction , materials science , heterojunction , optoelectronics , barrier layer , threshold voltage , transistor , saturation current , voltage , layer (electronics) , electrical engineering , nanotechnology , chemistry , engineering