Open AccessAdvancement of Gate Oxides from SiO2 to High-k Dielectrics in Microprocessor and Memory
Author(s) -
Urvashi Sharma,
Gulshan Kumar,
Sachin Mishra,
Reji Thomas
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2267/1/012142
Subject(s) - materials science , high κ dielectric , dielectric , optoelectronics , capacitance , capacitor , transistor , gate dielectric , cmos , metal gate , silicon , semiconductor , permittivity , electrical engineering , engineering physics , electronic engineering , gate oxide , engineering , chemistry , electrode , voltage