Open AccessSimulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer
Author(s) -
Yanxin Zhai,
Haiwang Li,
Zhi Tao,
Chunhui Yang,
Xiaoda Cao,
Zhizhao Che,
Tao Xu
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2246/1/012007
Subject(s) - accelerometer , piezoresistive effect , fabrication , silicon carbide , materials science , sensitivity (control systems) , vibration , microelectromechanical systems , substrate (aquarium) , stress (linguistics) , linearity , optoelectronics , computer science , electronic engineering , acoustics , engineering , composite material , physics , medicine , linguistics , oceanography , alternative medicine , philosophy , pathology , geology , operating system
This paper proposes a Micro Electro Mechanical Systems piezoresistive accelerometer based on a whole SiC substrate. Compared with Si-based sensors, SiC-based sensors have stronger mechanical advantages and unique advantages for applications in ultra-high temperature environments. The characteristics of the accelerometer are designed and numerically simulated, and the accelerometer is evaluated in terms of stress load and working frequency band. An innovative design is carried out to eliminate the stress concentration phenomenon in the corner area of the sensor, which guarantees the working safety of the fragile structure of SiC. After fabrication, packaging and vibration experiment, it is found that the sensor’s working sensitivity can reach 0.21mv/g, and its linearity can reach 98%.