Open AccessStudy on the Field-effect Carrier Transport of Epitaxial Graphene on SiC
Author(s) -
Jiaji Cao,
Shuhua Wei,
Zhi Jin,
Songang Peng,
Jing Zhang,
Xiufang Chen
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2242/1/012005
Subject(s) - materials science , silicon carbide , graphene , contact resistance , electron mobility , field effect transistor , epitaxy , field effect , optoelectronics , silicon , substrate (aquarium) , transistor , nanotechnology , electrical engineering , composite material , layer (electronics) , voltage , geology , oceanography , engineering
We have studied the field-effect carrier transport of graphene on 4H silicon carbide substrate. In order to extract the electrical parameters, the top-gated field effect transistor has been fabricated. By fitting the measured results with Kim’s model, the field effect carrier mobility ( µ ) and the metal/graphene contact resistance (R c ) and the residual carrier concentration (n 0 ) are derived to be 3382cm 2 /Vs, 2250Ω▪µm and 2.18×10 13 cm -2 , respectively. It is noted that the large contact resistance did not affect the high field effect carrier mobility of our device. The high carrier mobility suggests that the SiC epitaxial graphene may be quite suitable for the future high speed electronic applications.