Open AccessOptimization of atomic layer deposition of Al2O3 films as possible template for graphene transfer
Author(s) -
B. Blagoev,
D A Delibatov,
V. Mehandzhiev,
P. Sveshtarov,
Penka Terziyska,
I. Avramova,
P. M. Rafailov
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2240/1/012002
Subject(s) - graphene , atomic layer deposition , raman spectroscopy , x ray photoelectron spectroscopy , materials science , ellipsometry , chemical vapor deposition , layer (electronics) , oxide , analytical chemistry (journal) , deposition (geology) , thin film , chemical engineering , nanotechnology , chemistry , metallurgy , optics , organic chemistry , paleontology , physics , engineering , sediment , biology
Nanofilms of aluminium oxide Al 2 O 3 (ALO) were grown on Si, Cu and graphene/Cu substrates by atomic layer deposition (ALD). Trimethylaluminium (TMA) and deionized (DI) water were used as precursors for the ALD process. In order to obtain the ALD temperature window for the above-mentioned precursors, ALO nanofilms were deposited on Si substrates at temperatures ranging from 50 °C to 300 °C. Based on ellipsometry measurements of the films thickness, the growth rate of ALO films obtained was between 1.15 Å/cycle and 1.25 Å/cycle. Ellipsometry and XPS analyses showed that the optimal growth temperature for ALO films is between 150 °C and 200 °C. A graphene layer was grown on a Cu foil by chemical vapor deposition (CVD) and coated with an ALD ALO nanofilm. Raman spectroscopy was used to characterize the influence of ALO films deposition on the graphene layer. A Raman intensity enhancement for all graphene bands in the Al 2 O 3 /graphene/Cu sample was observed.