Open AccessEffect of strain-induced polarization field on band structure of MoS2 nanoribbon
Author(s) -
Minjiang Dan,
Gongwei Hu,
Nian Liu,
Yan Zhang
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2230/1/012022
Subject(s) - zigzag , materials science , monolayer , polarization (electrochemistry) , condensed matter physics , semiconductor , piezoelectricity , band gap , electronic band structure , optoelectronics , nanotechnology , composite material , physics , chemistry , geometry , mathematics
Single-layered transition metal dichalcogenides (TMDs) materials show intriguing device application potential due to their superior adjustability under various mechanisms. External strain can produce huge polarization fields inside two-dimensional piezoelectric semiconductor materials to modulate the relevant properties. In this paper, the strain-induced polarization field in monolayer zigzag MoS 2 nanoribbon is specifically discussed. For comparison, we also study the deformation potential by means of the strain-modified bond lengths and hopping energies. The edge states and band gap indicate a distinct change due to polarization field. This work can put forward feasible perspectives for designing low-dimensional materials-based devices.