Open AccessPlasma nitridation of silicon by N2and NH3in PECVD reactor
Author(s) -
V Bakardjieva,
Z. Alexieva,
G. Beshkov,
E. Mateev
Publication year - 2010
Publication title -
journal of physics conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/223/1/012010
Subject(s) - auger electron spectroscopy , materials science , plasma enhanced chemical vapor deposition , analytical chemistry (journal) , sputtering , silicon oxynitride , chemical vapor deposition , plasma , wafer , electron diffraction , electron spectroscopy , silicon , spectroscopy , chemistry , thin film , diffraction , silicon nitride , nanotechnology , optics , metallurgy , physics , chromatography , quantum mechanics , nuclear physics
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