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Photoluminescence temperature quenching of H2TPP and ZnTPP tetraphenylporphyrins thin films
Author(s) -
E S Alimova,
И. Б. Захарова,
M. A. Elistratova
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012023
Subject(s) - photoluminescence , atmospheric temperature range , materials science , thin film , tetraphenylporphyrin , quenching (fluorescence) , luminescence , analytical chemistry (journal) , photochemistry , porphyrin , chemistry , nanotechnology , optics , optoelectronics , fluorescence , physics , organic chemistry , meteorology
Photoluminescence temperature quenching of tetraphenylporphyrins thin films on silicon substrates have been investigated. Free-based tetraphenylporphyrin (H 2 TPP) and Zinc-tetraphenylporphyrin (ZnTPP) films were obtained by thermal evaporation in vacuum. The photoluminescence properties of these samples are observed in the wide temperature range from 77 to 300 K. The temperature-depended photoluminescence intensity of ZnTPP exhibits abnormal behaviour. An increase in the photoluminescence intensity is observed in the temperature range of 77-180 K. We suppose that charge carriers are trapped by non-radiative centres when the temperature decreases down to 77 K. The release of carriers occurs with a further temperature increase. In addition, there are sharp increases in the luminescence intensity of thin H 2 TPP and ZnTPP films at a temperature of 270 K, which are associated with a second-order phase transition.

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