Open AccessCreation of effective sources of white radiation based on GaP(As,N) on silicon substrates
Author(s) -
А. А. Лазаренко,
Е. В. Никитина,
E. V. Pirogov,
A. S. Gudovskikh,
Artem Baranov,
A M Mizerov,
M. S. Sobolev
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012021
Subject(s) - electroluminescence , heterojunction , optoelectronics , materials science , nitride , molecular beam epitaxy , silicon , light emitting diode , white light , silicon nitride , band gap , epitaxy , nanotechnology , layer (electronics)
The article is devoted to the study of light-emitting heterostructures based on GaP(As,N) dilute nitrides, monolithically grown on silicon substrates by plasma-assisted molecular beam epitaxy. Current-voltage characteristics and electroluminescence spectra of the grown heterostructures are obtained. For the first time, a unique effect is observed in GaP(As,N) dilute nitrides - the appearance of white electroluminescence when a reverse bias is applied. The result was obtained due to the original design of the light-emitting heterostructure and the unique properties of dilute nitride solid solutions.