Open AccessPhotoluminescence study of InP and In(As, P) inclusions into Si (100) substrate
Author(s) -
I. A. Melnichenko,
Anna Dragunova,
N. V. Kryzhanovskaya,
Dmitrii V. Viazmitinov,
Elizaveta Semenova,
Yury Berdnikov
Publication year - 2022
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2227/1/012017
Subject(s) - photoluminescence , materials science , substrate (aquarium) , epitaxy , silicon , spectroscopy , optoelectronics , infrared spectroscopy , infrared , analytical chemistry (journal) , nanotechnology , optics , chemistry , environmental chemistry , oceanography , physics , organic chemistry , layer (electronics) , quantum mechanics , geology
We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.